VRF152 VRF152mp 50v, 150w, 175mhz the VRF152 is a gold-metallized silicon n-channel rf power transistor de - signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? improved ruggedness v (br)dss = 130v ? 150w with 22db typical gain @ 30mhz, 50v ? 150w with 14db typical gain @ 175mhz, 50v ? excellent stability & low imd ? common source coniguration ? available in matched pairs ? 70:1 load vswr capability at speciied operating conditions? nitride passivated ? refractory gold metallization ? low rds replacement for mrf151/ blf177/ sd2941 ? rohs compliant symbol parameter VRF152(mp) unit v dss drain-source voltage 130 v i d continuous drain current @ t c = 25c 20 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 300 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speciied static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 50ma) 130 v r ds(on) drain-source on-state resistance 1 (v gs = 10v, i d = 10a) 0.13 0.20 ohms i dss zero gate voltage drain current (v ds = 50v, v gs = 0v) 50 a i gss gate-source leakage current (v gs = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 5a) 5.0 6.2 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4950 rev d 3-2016 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.60 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. m174 downloaded from: http:///
10 100 1000 0 20 40 60 80 100 120 VRF152(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 383 pf c oss output capacitance v ds = 50v 215 c rss reverse transfer capacitance f = 1mhz 20 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 1 18 22 db g ps f = 175mhz, v dd = 50v, i dq = 250ma, p out = 150w 14 d f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 1 50 % imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 1 -30 dbc f = 30mhz, v dd = 50v, i dq = 250ma, p out = 150w cw 70:1 vswr - all phase angles, 0.2msec x 20% duty factor no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speciications and information contained herein. 050-4950 rev d 3-2016 1 10 30 1 10 100 1000 20 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 45 0 4 8 12 16 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) v gs = 5v 6v 7v 8v 9v 10v 15v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) dc line i dmax t j = 125c t c = 75c typical performance curves pdmax 13v downloaded from: http:///
VRF152(mp) 050-4950 rev d 3-2016 16 18 20 22 24 26 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 50 100 150 200 250 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 50 100 150 200 250 0 0.2 0.4 0.6 0.8 1 1.2 1.4 output power (watts pep) figure 6. gain and eficiency vs p out 30mhz eficiency and gain output power input power (watts pep) figure 7. p out versus p in typical performance curves vdd=50v, idq = 250ma, freq=30mhz d = 0.9 8 10 12 14 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 0 50 100 150 200 250 0 50 100 150 200 250 0 5 10 50 20 output power (watts pep) figure 8. gain and eficiency vs p out 175mhz eficiency and gain output power input power (watts pep) figure 9. p out versus p in vdd=50v, idq = 250ma, freq=175mhz downloaded from: http:///
VRF152(mp) 050-4950 rev d 3-2016 30 mhz test circuit 175 mhz test circuit downloaded from: http:///
VRF152(mp) 050-4950 rev d 3-2016 a u m m q r b 1 4 3 2 d k e seating plane c j h pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain .5 soe package outline all dimensions are .005 dim inches millimeters min max min max a 0.096 0.990 24.39 25.14 b 0.465 0.510 11.82 12.95 c 0.229 0.275 5.82 6.98 d 0.216 0.235 5.49 5.96 e 0.084 0.110 2.14 2.79 h 0.144 0.178 3.66 4.52 j 0.003 0.007 0.08 0.17 k 0.435 11.0 m 45 nom 45 nom q 0.115 0.130 2.93 3.30 r 0.246 0.255 6.25 6.47 u 0.720 0.730 18.29 18.54 adding mp at the end of p/n speciies a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. downloaded from: http:///
VRF152(mp) 050-4950 rev d 3-2016 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confi- dential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein m ay not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this prod - uct has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purpose, merchantabil ity, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp disclaimer: downloaded from: http:///
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